发明人：王秩伟，吴黄宇，刘锦锦，李永恺，胡金国，姚裕贵

申请日期：2023.08.17

摘要：本发明涉及Kagome材料RMn₆Sn₆单晶及其制备方法，属于单晶材料技术领域。R为Zr或Hf，其中，ZrMn₆Sn₆的单晶结构为：P6/mmm空间群，a=5.410Å，b=5.410Å，c=8.982Å，α=9 ...

作者：Yu Pang^1,2;Jinjin Liu^3,4;Xuanhui Fan⁵;Haobo Yang¹;Jie Zhu^5,;;Zhiwei Wang^3,4,6,†;Yugui Yao^3,4,6;Xin Qian^1,; and Ronggui Yang^1,2,§; （¹School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, China; ²State Key Laboratory of Coal Combustion, Huazhong University of Science and Technology, Wuhan 430074, China; ³Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China; ⁴Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China; ⁵School of Energy and Power Engineering, Dalian University of Technology, Dalian 116024, China; ⁶Material Science Center, Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314011, China;）

出处：Physical Review B 2023

摘要：In this paper, we report on the thermal conductivity of RbV 3 Sb 5 and CsV 3 Sb 5 with three-dimensional charge density wave phase transitions from 40 ...

作者：Shihao Zhu¹;Juefei Wu¹;Peng Zhu^{2   3   4};Cuiying Pei¹;Qi Wang^{1   5};Donghan Jia⁶;Xinyu Wang⁶;Yi Zhao¹;Lingling Gao¹;Changhua Li¹;Weizheng Cao¹;Mingxin Zhang¹;Lili Zhang⁷;Mingtao Li⁶;Huiyang Gou⁶;Wenge Yang⁶;Jian Sun⁸;Yulin Chen^{1   5   9};Zhiwei Wang^{2   3   4};Yugui Yao^{2   3};Yanpeng Qi^{1   5   10}; （¹ School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China. ² Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China. ³ Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China. ⁴ Material Science Center, Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314011, China. ⁵ ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 201210, China. ⁶ Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China. ⁷ Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201203, China. ⁸ National Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China. ⁹ Department of Physics, Clarendon Laboratory, University of Oxford, Parks Road, Oxford, OX1 3PU, UK. ¹⁰ Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai, 201210, China.）

出处：Advanced science (Weinheim, Baden-Wurttemberg, Germany) 2023

关键词：high pressure;superconductivity;topological materials;transition metal dichalcogenides.

摘要：Topological transition metal dichalcogenides (TMDCs) have attracted much attention due to their potential applications in spintronics and quantum comp ...