发明人：王秩伟，刘锦锦，姚裕贵

申请日期：2023.08.04

摘要：本发明涉及一种反铁磁拓扑半金属材料EuSb₂单晶及其制备方法，属于单晶材料技术领域。所述单晶的晶胞参数为：a=4.7680Å，b=4.2990Å，c=8.97Å，α=γ=90°，β=103.01°。采用助熔剂法，选用的是Tl‑Sn作助熔剂，Tl和Sn元素的加入有助于使所述单晶中 ...

发明人：王秩伟，刘锦锦，姚裕贵

申请日期：2023.08.04

摘要：本发明涉及一种反铁磁拓扑半金属材料Eu₅In₂Bi₆单晶及其制备方法，属于单晶材料技术领域。所述单晶为正交相结构，属于Zintl相，晶胞参数为：a=7.735Å,b=23.96Å,c=4.686Å，α=β=γ=90°。采用的是以In为 ...

发明人：刘瑞斌，王宪双，姚裕贵，何雅格，束庆海

申请日期：2022.05.05

摘要：本发明涉及一种基于高速微爆图像的含能材料五爆参数快速定量诊断新方法，包括激波和等离子体演化动态过程对含能材料五爆参数(爆速、爆压、爆热、爆容和爆温)快速定量诊断方法，属于含能材料爆炸测试技术领域。获取已知爆轰参数的含能材料的激光诱导爆轰时间演化高速图像，并进行有数据降维、灰度线性拉伸、去噪、特征数据 ...

发明人：王秩伟，杨柳，李永恺，刘锦锦，姚裕贵，胡金国

申请日期：2023.08.17

摘要：本发明涉及一种层状反铁磁材料Mn_1.83Bi_1.17Te₄单晶及其制备方法，属于单晶材料技术领域。所述单晶的结构为：空间群为R m，a=4.22Å、b=4.22Å、c=40.48Å。Mn_1.83Bi_{1. ...}

作者：Shuo Wang¹²³;Jing-Zhi Fang¹²;Ze-Nan Wu¹²;Sirong Lu¹²³;Zhongming Wei⁴⁵;Zhiwei Wang⁶⁷;Wen Huang¹²³;Yugui Yao⁶⁷;Jia-Jie Yang¹²;Tingyong Chen¹²³;Ben-Chuan Lin¹²³;CA1;null;Dapeng Yu¹²³; （¹Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, China;²International Quantum Academy, Shenzhen, China;³Guangdong Provincial Key Laboratory of Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, China;⁴State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China;⁵Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China;⁶Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, China;⁷Micronano Center, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, China）

出处：Communications Physics 2024

摘要：The recently discovered kagome superconductors offer a promising platform for investigating intertwined orders and novel states, including topology, s ...

作者：Gui-Bin Liu;Hongliang Pang;Yugui Yao;Wang Yao （¹School of Physics, Beijing Institute of Technology, Beijing; 100081, China;²Department of Physics, Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, Hong Kong）

出处：NEW JOURNAL OF PHYSICS 2014

关键词：ELECTRONIC-STRUCTURE;VALLEY POLARIZATION;MOS2 MONOLAYERS;SPIN;PHOTOLUMINESCENCE;GROWTH

摘要：Monolayer transition metal dichalcogenides (TMDs) offer new opportunities for realizing quantum dots (QDs) in the ultimate two-dimensional (2D) limit. ...

发明人：王秩伟，李永恺，姚裕贵

申请日期：2023.09.19

摘要：本发明涉及一种制备层状磁性材料CoBr₂单晶的方法，属于单晶材料技术领域。通过将Co粉、BiBr₃粉和Bi颗粒真空密封在石英管中，然后置于高温炉中，首先室温升温到450~600℃，恒温保持5h以上，随后以1~6℃/h的速度降温到270~320℃，快速打开高 ...

发明人：王秩伟，李永恺，朱鹏，姚裕贵

申请日期：2023.09.19

摘要：本发明涉及一种拓扑半金属材料SrIn₂As₂片状单晶及其制备方法，属于单晶材料技术领域。通过将Sr、In和As真空密封在石英管中，将真空密封后的石英管置于高温炉中，自室温升温到900~1100℃，恒温保持5h以上，随后以0.5~4℃/h的速度降温到600~ ...

作者：Yanfeng Ge^1,2;Fan Zhang³;CA1;Ranga P. Dias^4,5;Russell J. Hemley^6,7;Yugui Yao²;CA2 （¹State Key Laboratory of Metastable Materials Science and Technology, Key Laboratory for Microstructural Materials Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, 066004, China;²Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China;³Department of Physics, University of Texas at Dallas, Richardson, TX, 75080, USA;⁴Department of Mechanical Engineering, University of Rochester, Rochester, NY, 14627, USA;⁵Department of Physics and Astronomy, University of Rochester, Rochester, NY, 14627, USA;⁶Department of Physics, University of Illinois at Chicago, Chicago, IL, 60607, USA;⁷Department of Chemistry, University of Illinois at Chicago, Chicago, IL, 60607, USA）

出处：Materials Today Physics 2020

摘要：We examine the effects of the low-level substitution of S atoms by C and Si atoms on the superconductivity of H₃S with the I m 3 ¯ m struct ...

发明人：王秩伟，杨莹，胡金国，姚裕贵

申请日期：2023.08.17

摘要：本发明涉及一种大带隙拓扑绝缘体材料Bi₄Br₄纳米结构及其制备方法，属于晶体材料技术领域。所述纳米结构采用物理气相输运法制备得到的，所述方法以Bi₄Br₄单晶为原料，通过对原料端在320~400℃真空加热并恒温保 ...