作者： Youjia Yin¹;Changjiang Deng^1,2;Xiaowei Cao¹;Yinan Hao¹;Yuefeng Hou³;Hongjing Xu⁴;Kamal Sarabandi⁵; （¹Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, China ²Tangshan Research Institute, Beijing Institute of Technology, Tangshan, China ³Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, School of Microelectronics, Tianjin University, Tianjin, China ⁴System Technology Innovation Research Department, Wireless Network, Huawei Technologies Company Ltd., Shanghai, China ⁵Department of Electrical Engineering and Computer Science, Radiation Laboratory, University of Michigan, Ann Arbor, MI, USA）

出处： IEEE Transactions on Antennas and Propagation 2024 Vol.72 No.1 P542-552

关键词： P-i-n diodes;Quantization (signal);Power transmission lines;Reflection;Microstrip;Apertures;PIN photodiodes;Aperture Efficiency;High Aperture Efficiency;Reconfigurable Reflectarray;Simulation Results;Linearly Polarized;Transmission Line;Ground Plane;Beam Scanning;Delay Line;PIN Diodes;Phase Quantization;Phase Difference;Incident Angle;Reflection Coefficient;Insertion Loss;Phase Error;Horizontal Polarization;OFF State;Aluminum Sheets;Adjacent States;Reflection Phase;Operating Frequency Band;Patch Antenna;Transmission Line Model;Vertical Polarization;Reconfigurable Intelligent Surface;Varactor;Air Layer;Input Admittance

摘要： In this article, a dual-polarized 2-bit electronically reconfigurable reflectarray (RRA) is proposed for 5G beam scanning applications. By introducing ...

作者： Yutong Wang^1,2;Feng Lin^1,3;Houjun Sun^1,3;Hongjiang Wu⁴;Chunliang Xu²;Yuan Fang⁴;Huidong Liu²;Yuanpeng Li²;Lu Cui^2,5;Ming Li²;Yonghui Wu²;Zhi Zeng²; （¹School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, China ²Microwave Applications Research Institute, CETC Academy of Industrial Foundation, Shijiazhuang, China ³Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing, China ⁴CETC Academy of Industrial Foundation, Shijiazhuang, China ⁵School of Microelectronics, Shandong University, Jinan, China）

出处： IEEE Transactions on Microwave Theory and Techniques 2023 P1-14

关键词： HEMTs;Field effect transistors;Gain;Gallium nitride;Transceivers;Semiconductor device measurement;Power generation

摘要： This article presents a W -band integrated transceiver (T/R) single chip based on gallium nitride (GaN) high electron mobility transistor (HEMT) techn ...