作者: Yutong Wang1,2;Feng Lin1,3;Houjun Sun1,3;Hongjiang Wu4;Chunliang Xu2;Yuan Fang4;Huidong Liu2;Yuanpeng Li2;Lu Cui2,5;Ming Li2;Yonghui Wu2;Zhi Zeng2; (1School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, China 2Microwave Applications Research Institute, CETC Academy of Industrial Foundation, Shijiazhuang, China 3Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing, China 4CETC Academy of Industrial Foundation, Shijiazhuang, China 5School of Microelectronics, Shandong University, Jinan, China)
出处: IEEE Transactions on Microwave Theory and Techniques 2023 P1-14
关键词: HEMTs;Field effect transistors;Gain;Gallium nitride;Transceivers;Semiconductor device measurement;Power generation
摘要: This article presents a W -band integrated transceiver (T/R) single chip based on gallium nitride (GaN) high electron mobility transistor (HEMT) techn ...